Our Products
High-k Dielectric Materials
High-k dielectric materials are precursors suitable for the ALD of high-k metal oxide films. High-k dielectric films are effective gate oxide & capacitor dielectric precursors for memory and advanced logic device applications. The benefits of high-k dielectric materials are reduced leakage current, lower power consumption and increased device reliability.
TMA
PCpZr
CpHf
Dielectrics
Si is the most commonly used element in the semiconductor industry, and silicon-containing materials are used in various parts of semiconductor devices. Silicon-containing films, such as insulating layers, etch stoppers, hard masks, spacers, and double patterning dielectrics, require high-quality conformal deposition at a low thermal budget.
BDEAS
HCDS
BTBAS
4MS
TEOS
Barriers and Metals
Transition metal & metal nitrides are widely used in semiconductor manufacturing to prevent diffusion and maintain electrical isolation due to the hardness, stability at high temperature, chemical inertness and electrical properties. These properties make them materials of choice for diffusion barriers and metal gates for microelectronic applications.
TiCl4
TMA
CCTBA
PCpZr
CpHf
Lithography Spacers
Lithography spacers are crucial components in the semiconductor manufacturing process used to enhance resolution and feature density. These materials enable cost efficiency utilizing technologies such as SADP and sidewall spacer techniques.
TSA
BTBAS
DIPAS
BDEAS
Low-K
Low-k dielectric materials are used in advanced deposition processes to reduce the capacitance of interconnects in advanced integrated circuit architectures. The benefits of low-k dielectrics are improved performance and reduced power consumption without compromising thermal stability. The applications include ILD, via fill material, and advanced packaging.
4MS
